Negative-U system of carbon vacancy in 4H-SiC.
نویسندگان
چکیده
Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V(C)) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor (2-|0) and single donor (0|+) levels of V(C), respectively.
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ورودعنوان ژورنال:
- Physical review letters
دوره 109 18 شماره
صفحات -
تاریخ انتشار 2012